| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor in which characteristics are stabilized and mobility and ON/OFF level can be maintained at a high level by allowing a gas barrier layer to interrupt deoxidation and dehydrated vapor from a plastic base material. SOLUTION: The gas barrier layer is provided between the plastic base material and an oxide semiconductor layer of the transistor provided with the oxide semiconductor layer provided on the plastic base material, a source electrode arranged in electrically contact with the oxide semiconductor layer, a drain electrode electrically contacting the oxide semiconductor layer and separately arranged on the source electrode, a gate insulation film provided on the oxide semiconductor layer positioned between the source electrode and the drain electrode when the plastic base material is viewed immediately above, and a gate electrode provided on the gate insulation film. With this configuration, the deoxidation and dehydrated vapor from the plastic base material can be prevented from influencing the oxide semiconductor film. COPYRIGHT: (C)2007,JPO&INPIT
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