| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for melting a silicon single crystal raw material capable of improving the loading rate into a crucible, proceeding melting of polycrystal silicon without deviation so that the time required for melting can be shortened. SOLUTION: The polycrystal silicon is melted in a state that columnar polycrystal silicon 3 with rectangular or circular cross section is arranged in a crucible 1 so that the axial line lies horizontally and heads toward the radial direction of the crucible, and a plurality of the columnar polycrystal silicon 3 are arranged so that the disposition pattern of the columnar polycrystal silicon 3 is made crisscross or radial. COPYRIGHT: (C)2007,JPO&INPIT
|
