发明名称 Gate critical dimension variation by use of ghost features
摘要 According to various embodiments, the present teachings include various methods for forming a semiconductor device, computer readable medium for forming a semiconductor device, mask sets for forming a semiconductor device, and a semiconductor device made according to various methods. For example, a method can comprise forming a first feature and a second feature on a substrate by exposing a first mask to a first beam, wherein the second feature is disposed adjacent to the first feature, exposing a second mask to a second beam, and removing the second feature from the substrate.
申请公布号 US2007105387(A1) 申请公布日期 2007.05.10
申请号 US20050269633 申请日期 2005.11.09
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 BLATCHFORD JAMES W.;RATHSHACK BENJAMEN M.
分类号 H01L21/302 主分类号 H01L21/302
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