| 摘要 |
The invention relates to a method for operating a memory device, and to a memory device with a plurality of memory cells ( 1 ) which each have at least one switching device ( 13 ) assigned thereto for controlling, as well as a current supply line and a current discharge line ( 11, 12 ), wherein said current supply line ( 11 ) and said current discharge line ( 12 ) are substantially parallel to each other.
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