| 摘要 |
An exemplary method for fabricating a thin film transistor array substrate ( 200 ) includes: providing an insulating substrate ( 201 ); coating a transparent conductive layer ( 202 ) and a gate metal layer ( 203 ) on the substrate; forming a gate electrode ( 213 ) and a pixel electrode ( 212 ) using a first photo-mask process; forming a gate insulating layer ( 204 ), an amorphous silicon layer ( 205 ), a doped amorphous silicon layer ( 206 ), and a source/drain metal layer ( 207 ) on the substrate; forming a plurality of source electrodes ( 227 ) and a plurality of drain electrodes ( 228 ) using a second photo-mask process; depositing a metal layer ( 208 ) on the substrate and the pixel electrodes; and forming a passivation layer ( 209 ) on the source electrodes, the drain electrodes and the channels and a plurality of metal contact layers ( 218 ) using a third photo-mask process. |
