| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device, having high productivity and a high light emission efficiency and desired light emission characteristics by effectively preventing the diffusion of impurities between a p-type clad layer and an active layer. SOLUTION: The semiconductor light-emitting device comprises a substrate 1 formed of a single-crystalline silicon, and a light-emitting element 2 which is formed of a GaAs-based compound semiconductor and comprises an n-type clad layer 4, active layer 5, and p-type clad layer 7, which are disposed in the order on the upper surface of the substrate 1. Between the p-type clad layer 7 and the active layer 5 of the light-emitting element 2, a diffusion suppression layer 6, chief of which is a GaAs-based compound semiconductor and which contains carbon atoms (C) at a concentration between 5×10<18> cm<-3> and 1×10<20> cm<-3> , is interposed. |
