发明名称 HIGH-FREQUENCY POWER AMPLIFIER
摘要 PROBLEM TO BE SOLVED: To improve efficiency and reduce a noise by a stable performance in a high-frequency power amplifier. SOLUTION: A bias voltage DC is applied through a resistor R1 to the base of a transistor Q1, and a high frequency signal RF is inputted through a capacitor C1. The bias voltage DC is applied through a resistor R2 to the base of a transistor Q2. The bias voltage DC is applied through a resistor R3 to the base of a transistor Q3, and a high frequency signal RF is inputted through a capacitor C3. A band stop filter F12 is provided between the base of the transistor Q1 and the base of the transistor Q2. A band stop filter F23 is provided between the base of the transistor Q2 and the base of the transistor Q3. Moreover, the respective collectors of the transistors Q1-Q3 are commonly connected, and the respective emitters thereof are all grounded. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007116619(A) 申请公布日期 2007.05.10
申请号 JP20050308667 申请日期 2005.10.24
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 INAMORI MASAHIKO;SUGIYAMA HIROSHI;OHASHI KAZUHIKO;NAKAYAMA MASAO;MOTOYOSHI KANAME
分类号 H03F1/26;H03F1/02 主分类号 H03F1/26
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