| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the switching times of the turn-off and turn-on of a gate driven transistor, and equalizing the driving of a transistor cell. SOLUTION: The semiconductor device has a first gate leading-out electrode 1a formed on the outer periphery of an actual operating region 4a, first gate metallic wirings 1b electrically connected on the first gate leading-out electrode 1a, and trench gate electrodes 3 formed in the actual operating region 4a and a non-operating region 4c. The semiconductor device further has second gate leading-out electrodes 2a formed on the trench gate electrodes 3 in the non-operating region 4c, and second gate wiring electrodes 2b electrically connected on the second gate leading-out electrodes 2a. The second gate leading-out electrodes 2a are connected electrically on the trench gate electrodes 3 and the first gate leading-out electrode 1a, and the second gate leading-out electrodes 2b are connected electrically. The first gate metallic wirings 1b and the second gate metallic wirings 2b are separated spatially by a first gap 5a, and the first gate metallic wirings 1b are separated partially and spatially by a second gap 5b. COPYRIGHT: (C)2007,JPO&INPIT
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