| 摘要 |
PROBLEM TO BE SOLVED: To improve manufacturing yield of a semiconductor device which uses a plasma manufacturing device. SOLUTION: An insulating film is firstly formed on a semiconductor wafer 1W. Then, the waveform of reflection wave Pr and plasma impedance Vpp of a plasma manufacturing device 31 are detected. An opening is formed on the insulating film of the semiconductor wafer 1W by plasma-etching while the detected waveform of reflection wave Pr and plasma impedance Vpp are checked against the threshold value of abnormal discharge set in subdivided time unit for the time of rising, stable, and falling of plasma. COPYRIGHT: (C)2007,JPO&INPIT
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