| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting element, which uses a nitride semiconductor substrate consisting of a nitride semiconductor film having a good crystallizability and is formed with an electrode on its rear surface, and to provide a nitride semiconductor element such as a light-receiving element. SOLUTION: A nitride semiconductor substrate is obtained by growing a nitride semiconductor film in a film thickness of 100 μm or thicker on a substrate consisting of a material different from the nitride semiconductor film, and by removing the obtained substrate from the nitride semiconductor film. The surface of the semiconductor substrate is grown into a surface polished until the difference between the recesses and projections of the surface of the semiconductor substrate is reduced to ±1 μm or smaller. The irregularity of the surface is prefered to be ±0.5 μm or smaller. The semiconductor substrate is doped with n-type impurities. |
