发明名称 |
METHOD OF FORMING INTERCONNECT HAVING STACKED ALIGNMENT MARK |
摘要 |
A first film layer is formed over a substrate. A portion of the first film layer is removed to form a first alignment mark pattern and a first conductive layer is formed to fill the first alignment mark pattern to form a first alignment mark. A second film layer is formed and a portion of the second film layer is removed to form openings and to form a second alignment mark pattern. A second conductive layer is formed to fill the openings to form first conductive wires and to fill the second alignment mark pattern to form a second alignment mark. A third film layer and a hard mask layer are formed over the second film layer and a portion of the hard mask layer and the third film layer is removed to form via openings. A third conductive layer is formed in the via openings.
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申请公布号 |
US2007105364(A1) |
申请公布日期 |
2007.05.10 |
申请号 |
US20070620057 |
申请日期 |
2007.01.05 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHIA WEI-SHENG;CHEN CHIH-JUNG;CHEN CHUNG-AN;HUANG CHIH-CHUNG |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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