HIGH STRAIN GLASS/GLASS-CERAMIC CONTAINING SEMICONDUCTOR-ON-INSULATOR STRUCTURES

摘要

The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers According to one embodiment of the invention, a semiconductor-on- insulator structure has a first layer including a semiconductor material (110), attached to a second layer including a glass or glass-ceramic (120), with the strain point of the glass or glass-ceramic equal to or greater than about 8000C.