发明名称 |
NON-VOLATILE MEMORY DEVICE |
摘要 |
<p>A non-volatile memory device and method of manufacturing a non-volatile micro-electromechanical memory cell. The method comprises the first step of depositing a first layer of sacrificial material on a substrate by use of Atomic Layer Deposition The second step of the method is providing a cantilever (101) over at least a portion of the first layer of sacrificial material. The third step is depositing, by use of Atomic Layer Deposition, a second layer of sacrificial material over the first layer of sacrificial material and over a portion of the cantilever such that a portion of the cantilever is surrounded by sacrificial material. The fourth step is providing a further layer material (107) which covers at least a portion of the second layer of sacrificial material. Finally, the last step is etching away the sacrificial material surrounding the cantilever, thereby defining a cavity (102) in which the cantilever is suspended.</p> |
申请公布号 |
WO2007052039(A1) |
申请公布日期 |
2007.05.10 |
申请号 |
WO2006GB04107 |
申请日期 |
2006.11.02 |
申请人 |
CAVENDISH KINETICS LIMITED;VAN KAMPEN, ROBERT;KAZINCZI, ROBERT |
发明人 |
VAN KAMPEN, ROBERT;KAZINCZI, ROBERT |
分类号 |
B81B3/00;B81C1/00;G11C11/50;G11C23/00;H01H1/00;H01H51/12;H01H59/00 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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