| 摘要 |
<p>A copper plating bath characterized by containing a reaction condensation product of a compound of amine and a glycidyl ether and/or a quaternary ammonium derivative of the product and a method for plating a substrate using the plating bath. A substrate such as a semiconductor wafer, e.g., a silicon wafer or a printed circuit board, having a fine circuit pattern and a fine hole such as a blind via hole or a through hole can be plated with copper with high reliability.</p> |
