MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND PLASMA PROCESSOR

摘要

PROBLEM TO BE SOLVED: To provide a method for plasma processing in a semiconductor substrate, capable of effectively cleaning on a lower electrode or around the lower electrode.

SOLUTION: A manufacturing method for a semiconductor device comprises the steps (401 to 404) of performing a desirable processing on the semiconductor substrate installed on a support in a processing chamber, with process gas which is ionized after the inside of the processing chamber is evacuated; the step (405) of cleaning with the ionized cleaning gas; the step (406) of eliminating electrification on the semiconductor substrate with the ionized gas; and the step (407) of separating the semiconductor substrate from the support to form a space between the support and the semiconductor substrate, for cleaning a surface of the lower electrode and around it with the ionized gas.

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