PLANAR SUBSTRATE WITH SELECTED SEMICONDUCTOR CRYSTAL ORIENTATIONS FORMED BY LOCALIZED AMORPHZATION AND RECRYSTALLIZATION OF STACKED TEMPLATE LAYERS
摘要
A method utilizing localized amorphization and recrystallization of stacked template layers is provided for making a planar substrate having semiconductor layers of different crystallographic orientations. Also provided are hybrid-orientation semiconductor substrate structures built with the methods of the invention, as well as such structures integrated with various CMOS circuits comprising at least two semiconductor devices disposed on different surface orientations for enhanced device performance.
申请公布号
WO2005057631(A3)
申请公布日期
2007.05.10
申请号
WO2004US39970
申请日期
2004.11.30
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;DE SOUZA, JOEL, P.;OTT, JOHN, A.;REZNICEK, ALEXANDER;SAENGER, KATHERINE, L.
发明人
DE SOUZA, JOEL, P.;OTT, JOHN, A.;REZNICEK, ALEXANDER;SAENGER, KATHERINE, L.
