SEMICONDUCTOR DEVICE HAVING LDD TYPE SOURCE/DRAIN REGION AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device having an LDD(Lightly Doped Drain) type source/drain region and a fabricating method thereof are provided to minimize a contact resistance and improve reliability of the semiconductor device. CONSTITUTION: A couple of gate patterns(60a) is formed on the first conductive type semiconductor substrate(51). A gate insulating layer(55) is inserted between the gate patterns and the first conductive type semiconductor substrate(51). The gate pattern(60a) includes a gate electrode(57a) and a capping layer pattern(59). The second conductive type LDD source/drain region(73) is formed on the first conductive type semiconductor substrate(51) of both sides of the gate patterns(60a). The source/drain region(73) includes a low density source/drain region(63) and a high density source/drain region(71). The first conductive type semiconductor substrate(51) is covered by the first etch stop layer(67). An interlayer dielectric(81) is formed on the first etch stop layer(67). The second etch stop layer(79) can be inserted between the interlayer dielectric(81) and the first etch stop layer(67). The source/drain region(73) is exposed by a contact hole(82a). The contact hole(82a) is covered by a wire(83a). The wire(83a) is electrically connected with the source/drain region(73).