PHOTOMASK, METHOD FOR MANUFACTURING THE SAME, AND PATTERN TRANSFER METHOD

摘要

PROBLEM TO BE SOLVED: To provide a photomask that can decrease changes in a polarization state of exposure light induced by the mask itself and transfer a preferable fine image onto a wafer in photolithography with a 45 nm half pitch node or further advanced techniques, and to provide a method for easily manufacturing the mask and a pattern forming method using the photomask.

SOLUTION: The photomask has a mask pattern on one principal face of a transparent substrate, wherein the principal face including the mask pattern is covered with a thin film layer having a refractive index higher than that of air and high refractive index for exposure light.

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