| 摘要 |
PROBLEM TO BE SOLVED: To alleviate electrical charge present on a metal plug surface to inhibit the plug from being dissolved through wet processing associated with the resist stripping when doing via etching on a borderless structure. SOLUTION: A method for manufacturing a semiconductor device having a borderless wiring structure forms a borderless via-hole in which two different types of metals are exposed in an aperture, wherein prior to the wet processing for stripping a resist mask used to form the via hole, ashing is done using plasma including H<SB>2</SB>O. COPYRIGHT: (C)2007,JPO&INPIT
|
