| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which a gate insulating film consisting of a high dielectric material and a gate electrode consisting of a metal can be formed on a semiconductor substrate without lengthening any distance from a source-drain diffused layer to the gate electrode. SOLUTION: The method of manufacturing the semiconductor device comprises the steps of forming a trench 80 reaching a semiconductor substrate 10 in an interlayer insulating film 70 on the semiconductor substrate 10, wherein a side wall of the trench 80 consists of a silicon nitride film 60; depositing a gate insulating film 90 consisting of an HfSiO film based on 200°C to 260°C, so that the HfSiO film may not be deposited on the silicon nitride film 60 but the HfSiO film may be deposited on the semiconductor substrate 10 exposed on the bottom face of the trench 80; and filling up the trench 80 with a gate electrode 95 consisting of the metal. COPYRIGHT: (C)2007,JPO&INPIT
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