| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of defining an area which affects an amount of plasma damage. SOLUTION: The semiconductor device is equipped with a gate insulating film 3 formed on a semiconductor substrate 1, a gate electrode 4 formed on the gate insulating film 3, a conductive pattern 5 for TEG (Thermoelectric Generator) which is located in the same layer as the gate electrode 4 and is connected to the gate electrode 4, an interlayer insulating film 10 formed on the conductive pattern 5 for TEG, a connecting hole 10a which is formed in the interlayer insulating film 10 and is located on the conductive pattern 5 for TEG, and a groove 10b which is formed in the interlayer insulating film 10 and surrounds peripheries of the conductive pattern 5 for TEG. COPYRIGHT: (C)2007,JPO&INPIT
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