| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a memory device where a pinning side is provided in a magnetic thin line by a single process and a simple deposition process. SOLUTION: A memory cell comprises a plurality of unit cells having: a substrate 1; a deposition 2 provided on the substrate 1; a groove 8 with a rectangular opening shape provided up to right the substrate 1 on the deposition 2; the magnetic thin line 3 provided in the groove 8; a write device 4 that records data in the magnetic thin line 3; and a read device 5 that reproduces the recorded data in the magnetic thin line 3, and moving a magnetic wall formed by recording the data in the magnetic thin line 3 by current. In the method for manufacturing the memory cell, a periodically curved section 7 is provided by repeating etching on one first side out of two pairs of sides mutually opposed in the groove 8, to form the magnetic thin film 3 along the curved section 7 on the first side. COPYRIGHT: (C)2007,JPO&INPIT
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