| 摘要 |
PROBLEM TO BE SOLVED: To provide a fine semiconductor device with little variation in characteristics, by reducing edge roughness of a resist pattern and improving etching resistance, and its manufacturing method. SOLUTION: In manufacturing a semiconductor device using the resist pattern 5 formed on a silicon substrate 1 as a mask, the resist pattern 5 is subjected to graphite treatment by means of catalytic effects of liquid metal in a liquid metal reservoir 6 (for example, gallium, indium or gallium-indium alloy). COPYRIGHT: (C)2007,JPO&INPIT |
