| 摘要 |
PROBLEM TO BE SOLVED: To provide a fine active layer and interface of the activity layer by suppressing an isolation of In and by enabling crystal growth excellent in controllability in a manufacturing process of compound semiconductor light-emitting device. SOLUTION: A method of manufacturing the compound semiconductor light-emitting device comprises: forming a lower clad layer 4 on a substrate using metal organic vapor phase epitaxy; forming an active layer 5 containing In at a first temperature on the lower clad layer; forming Al<SB>X</SB>Ga<SB>1-X</SB>N(0≤X≤1) layer 6, an evaporation prevention layer, at a second temperature equal to the first temperature or less on the active layer; and forming an upper clad layer 7 at a third temperature equal to the second temperature or more on the Al<SB>X</SB>Ga<SB>1-X</SB>N(0≤X≤1) layer. This makes easier a composition ratio control of In, and can offer the fine active layer and the interface of the active layer simultaneously. COPYRIGHT: (C)2007,JPO&INPIT
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