发明名称 |
Methods of forming contact structures in low-k materials using dual damascene processes |
摘要 |
A method of forming a via using a dual damascene process can include removing a material from a recess in a low-k material using an ashing process while maintaining a protective spacer on an entire side wall of the recess to cover the low-k material in the recess.
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申请公布号 |
US2007105362(A1) |
申请公布日期 |
2007.05.10 |
申请号 |
US20050270783 |
申请日期 |
2005.11.09 |
申请人 |
KIM JAE H;PARK WAN J;LIN YI-HSIUNG |
发明人 |
KIM JAE H.;PARK WAN J.;LIN YI-HSIUNG |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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