发明名称 Methods of forming contact structures in low-k materials using dual damascene processes
摘要 A method of forming a via using a dual damascene process can include removing a material from a recess in a low-k material using an ashing process while maintaining a protective spacer on an entire side wall of the recess to cover the low-k material in the recess.
申请公布号 US2007105362(A1) 申请公布日期 2007.05.10
申请号 US20050270783 申请日期 2005.11.09
申请人 KIM JAE H;PARK WAN J;LIN YI-HSIUNG 发明人 KIM JAE H.;PARK WAN J.;LIN YI-HSIUNG
分类号 H01L21/4763 主分类号 H01L21/4763
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