发明名称 METHODS FOR ATOMIC-LAYER DEPOSITION
摘要 Atomic-Layer deposition systems and methods provide a variety of electronic products. In an embodiment, a method uses an atomic-layer deposition system that includes an outer chamber, a substrate holder, and a gas-distribution fixture that engages or cooperates with the substrate holder to form an inner chamber within the outer chamber. The inner chamber has a smaller volume than the outer chamber, which leads to less time to fill and purge during cycle times for deposition of materials.
申请公布号 US2007101929(A1) 申请公布日期 2007.05.10
申请号 US20070620324 申请日期 2007.01.05
申请人 MICRON TECHNOLOGY, INC. 发明人 AHN KIE Y.;FORBES LEONARD
分类号 C30B28/14;C23C16/44;C23C16/455;H01L21/00 主分类号 C30B28/14
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