发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit apparatus having a voltage sensing circuit wherein the pairing quality of the transistor characteristics of its current mirror circuit is so secured and the caused variation of the transistor characteristics by its age-based change, etc. is so suppressed circuit-wise too as to suppress the variation and age-based change of its sensing voltages. SOLUTION: The semiconductor integrated circuit apparatus has a voltage sensing circuit including a current mirror circuit 1, a negative-voltage boosting pump circuit 2, and an oscillating circuit 3. Also, in the non-operating state of the voltage sensing circuit, at least the connection of the current mirror circuit 1 is released with the negative-voltage boosting circuit 2. Further, in its non-operating state, first, second, and third pairs of arbitrary same potentials, whose values are not higher than the power-supply voltage of the current mirror circuit 1 and are not lower than the grounding voltage thereof, are applied respectively to source-, drain-, and gate-terminal pairs of transistors Q1, Q2. Moreover, in its non-operating state, a change-over switch S1 is opened and a resistor R2 is grounded. Furthermore, in its non-operating state, the electric conditions of the transistors Q1, Q2 in the current mirror circuit become same because the materials and dimensions of the resistors R1, R2 are same with each other. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007115962(A) 申请公布日期 2007.05.10
申请号 JP20050307011 申请日期 2005.10.21
申请人 TOSHIBA CORP 发明人 SAITO KOJI;SHINBA YOSHIAKI
分类号 H01L21/822;H01L27/04 主分类号 H01L21/822
代理机构 代理人
主权项
地址