| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device and a manufacturing method thereof wherein the power loss in a horizontal transfer is suppressed, and lower power consumption and higher level pixels are made compatible. SOLUTION: On a semiconductor substrate for constructing the solid state imaging device, there are formed a plurality of light receivers 2 arranged in a form of a two-dimensional matrix, a plurality of vertical transfers 3 for vertically transferring the signal charges read from respective light receivers 2, the horizontal transfer 4 for horizontally transferring the signal charges transferred by the vertical transfers 3, a barrier region 6 adjacent to the horizontal transfer 4 for passing the surplus charge of the horizontal transfer 4, a drain region 7 adjacent to the barrier region 6 for draining the surplus charge passing the barrier region 6, and bus-lines 12, 13 arranged in parallel with the drain region 7 for applying a control voltage across the electrodes 10, 11 of the horizontal transfer. The bus-lines 12, 13 and the electrodes 10, 11 of the horizontal transfer are connected via a connecting pattern 14 arranged between the bus-lines 12, 13 and the drain region 7. COPYRIGHT: (C)2007,JPO&INPIT
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