| 摘要 |
PROBLEM TO BE SOLVED: To prevent a photocurrent due to external light and a variation in characteristics of transistors or a failure by a short circuit due to the influence of a back channel. SOLUTION: A light shield film 70 made of a nonconductive material is formed on an insulation substrate 10. A back gate insulation film 11 is formed covering the light shield film 70. An active layer 33 is formed on this back gate insulation film 11. A gate insulation film 12 is formed covering the active layer 33, and a gate electrode 31 is formed on the gate insulation film 12. The light shield film 70 is disposed covering the active layer 33 with the back gate insulation film 11 interposed therebetween, having a function of shielding the active layer 33 from external light entering through the insulation substrate 10. COPYRIGHT: (C)2007,JPO&INPIT
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