| 摘要 |
To form a conductive pattern on dielectric substrates, a method is proposed in which a) a substrate covered with a metal film is coated with a protective layer which is formed by treating the metal film with a solution which contains at least one compound containing nitrogen, b) the protective layer is stripped away by UV radiation at least partially in the regions which do not correspond to the conductive pattern to be formed, in such a way that the metal film is exposed, and c) the exposed metal film is then removed by etching. By means of this method, extremely fine conductive patterns can be manufactured in a reproducible manner on dielectric substrates.
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