| 摘要 |
PROBLEM TO BE SOLVED: To provide a target material for Ru sputtering realizing a high film deposition rate required upon sputtering and simultaneously capable of uniformly forming a film thickness distribution in the thin film to be deposited. SOLUTION: The target material for Ru sputtering has a metallic structure composed of equiaxed crystals, and in which the sputtering face is orientated to the (002) plane. Further, the content of oxygen is preferably≤50 ppm. COPYRIGHT: (C)2007,JPO&INPIT
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