发明名称 |
Method of producing a thin layer of crystalline material |
摘要 |
A technique for forming a film of crystalline material, preferably silicon. The technique creates a sandwich structure with a weakened region at a selected depth underneath the surface. The weakened region is a layer of porous silicon with high porosity. The high porosity enclosed layer is formed by (1) forming a porous silicon layer with low porosity on surface of the substrate, (2) epitaxial growth of a non-porous layer over the low-porous layer (3) increasing of porosity of the low-porous layer making the said layer hi-porous, (4) cleaving the semiconductor substrate at said high porous layer. The porosity of the buried low-porous layer is increased by hydrogenation techniques, for example, by processing in hydrogen plasma. The process is preferentially used to produce silicon-on-insulator wafers.
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申请公布号 |
US6806171(B1) |
申请公布日期 |
2004.10.19 |
申请号 |
US20020213593 |
申请日期 |
2002.08.07 |
申请人 |
SILICON WAFER TECHNOLOGIES, INC. |
发明人 |
ULYASHIN ALEXANDER;USENKO ALEXANDER |
分类号 |
H01L21/20;H01L21/205;H01L21/762;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
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