| 摘要 |
A method of manufacturing a semiconductor device according to an aspect of the present invention comprises a step of forming a gate insulating layer on a semiconductor substrate, a step of forming a first metal layer on the gate insulating layer, a step of forming a second metal layer including elements for use in work function modulation on the first metal layer, a step of forming a cap layer made of a material having a melting point higher than that of the second metal layer on the second metal layer, and a step of precipitating the elements at an interface between the gate insulating layer and the first metal layer by thermal treatment.
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