发明名称 PLASMA PROCESSING APPARATUS
摘要 <p>A plasma processing apparatus is provided with a beam-like spacer (7) arranged on an upper opening of a chamber (3) which faces a substrate (2). The beam-like spacer (7) is provided with an annular outer circumference portion (7a) supported by the chamber (3) on its lower plane (7d), a center portion (7b) positioned at the center of a region surrounded by the outer circumference portion (7a) in plane view, and a plurality of beam portions (7c) radially extending from the center portion (7b) to the outer circumference portion (7a). The entire dielectric plate (8) is uniformly supported by the beam-like spacer (7). The dielectric plate (8) is thinned, while ensuring mechanical strength for holding atmospheric pressure when inside the chamber (3) is depressurized.</p>
申请公布号 WO2007052711(A1) 申请公布日期 2007.05.10
申请号 WO2006JP321890 申请日期 2006.11.01
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;HIROSHIMA, MITSURU;ASAKURA, HIROMI;WATANABE, SYOUZOU;OKUNE, MITSUHIRO;SUZUKI, HIROYUKI;HOUTIN, RYUUZOU 发明人 HIROSHIMA, MITSURU;ASAKURA, HIROMI;WATANABE, SYOUZOU;OKUNE, MITSUHIRO;SUZUKI, HIROYUKI;HOUTIN, RYUUZOU
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
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