SILICON CARBIDE EPITAXIAL LAYERS GROWN ON SUBSTRATES OFFCUT TOWARDS ???????,申请号KR20017016473-传众专利搜索

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发明名称	SILICON CARBIDE EPITAXIAL LAYERS GROWN ON SUBSTRATES OFFCUT TOWARDS ???????
摘要
申请公布号	KR100716522(B1)	申请公布日期	2007.05.10
申请号	KR20017016473	申请日期	2001.12.21
申请人		发明人
分类号	H01L21/20	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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