| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting device which ensures higher light emission efficiency and higher light emission efficiency. <P>SOLUTION: A nitride semiconductor light emitting device includes a laminated portion formed of an n-type semiconductor layer, an active layer, and a p-type semiconductor layer laminated on a substrate in order to emit the light. The side surface of the laminated portion is formed as a slope including the surface of the n-type semiconductor layer, and an n-type electrode is formed on the surface of the n-type semiconductor layer. <P>COPYRIGHT: (C)2004,JPO |
