| 摘要 |
This invention relates to a method of implanting ions in a substrate (36, Fig. 4A) using an ion beam in which instabilities may be present and to an ion implanter for use with such a method. This invention also relates to an ion source 22 for generating an ion beam that can be switched off rapidly comprising a switch and biasing means. In essence, the invention provides a method of implanting ions comprising switching off the ion beam when an instability has been detected, continuing motion of the substrate relative to the ion beam to leave an un-implanted portion (78) of a scan line across the substrate (36), establishing a stable ion beam once more and finishing the scan line by implanting the un-implanted portion of the path. |
