发明名称 MICRODEVICE AND ITS PRODUCTION METHOD
摘要 <p>A micro-device including an insulating substrate having a recess formed on the surface thereof, and a beam-like structure made of silicon formed on the front surface of the insulating substrate to surround the recess. The beam-like structure includes at least one functional section, and the functional section has a supporting section bonded onto the insulating substrate and at least one cantilever formed integrally with the supporting section while extending across the recess. The micro device also has an electrically conductive film electrically connected with the supporting section and formed on the surface of the recess at least in a portion right under a cantilever. The electrically conductive film prevents the surface of the recess from being positively charged in the dry etching process. Thus the etching gas having positive charge is not subjected to electrical repulsion of the recess and does not impinge on the back surface of the silicon substrate, and therefore erosion of the cantilever does not occur. As a result, since the beam-like structure is formed with high accuracy in the shape and dimensions, the micro device of the present invention can improve a high reliability and a degree of freedom in design of the micro device. <IMAGE></p>
申请公布号 EP1203748(B1) 申请公布日期 2007.05.09
申请号 EP20000900814 申请日期 2000.01.19
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 YOSHIDA, YUKIHISA;CHABLOZ, MARTIAL;JIAO, JIWEI;MATSUURA, TSUKASA;TSUTSUMI, KAZUHIKO
分类号 B81B3/00;B81B7/00;B81C1/00;G01P1/02;G01P15/08;G01P15/125;G02B26/08;H01L29/84 主分类号 B81B3/00
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