An electrically programmable non-volatile memory cell comprises a first electrode, a second electrode and an inter-electrode layer, such as ultra-thin oxide, between the first and second electrodes which is characterized by progressive change in resistance in response to program stress of relatively low voltages. A programmable resistance representing stored data is established by stressing the inter-electrode layer between the electrodes. Embodiments of the memory cell are adapted to store multiple bits of data per cell and/or adapted for programming more than one time without an erase process.
申请公布号
EP1501098(A3)
申请公布日期
2007.05.09
申请号
EP20040250187
申请日期
2004.01.15
申请人
MACRONIX INTERNATIONAL CO., LTD.
发明人
YEH, CHIH CHIEH;LAI, HAN CHAO;TSAI, WEN JER;LU, TAO CHENG;LU, CHIH YUAN