发明名称 |
Polishing composition and polishing method employing it |
摘要 |
<p>A polishing composition comprising: (a) an abrasive, (b) a compound to form a chelate with copper ions (c) a compound to provide a protective layer-forming function to a copper layer, (d) hydrogen peroxide, and (e) water, wherein the abrasive of component (a) has a primary particle size within a range of from 50 to 120 nm. This is used for polishing a semiconductor device having at least a layer of copper and a layer of a tantalum-containing compound formed on a substrate.</p> |
申请公布号 |
EP1182242(B1) |
申请公布日期 |
2007.05.09 |
申请号 |
EP20010307117 |
申请日期 |
2001.08.21 |
申请人 |
FUJIMI INCORPORATED |
发明人 |
SAKAI, KENJI;ASANO, HIROSHI;KITAMURA, TADAHIRO;INA, KATSUYOSHI |
分类号 |
C09G1/02;B24B37/00;C09K3/14;C23F3/06;H01L21/304 |
主分类号 |
C09G1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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