Semiconductor material, production method thereof and semiconductor device

摘要

A semiconductor material having a stepwise surface structure of (0001)-plane terraces and (11-2n)-plane steps [n‰¥0] on the SiC substrate, a semiconductor device using the same and a method of producing the semiconductor material in which a carbon-rich surface is formed on the SiC substrate prior to epitaxial growth of an SiC crystal, the carbon-rich surface satisfies the ratio R = (I 284.5 /I 282.8 ) >0.2, wherein I 282.8 (I SiC ) is an integrated intensity of a Cls signal having a peak at the binding energy relating to stoichiometric SiC (in the region of 282.8 eV), and I 284.5 (I C ) is an integrated intensity of a C1s signal having a peak at the binding energy relating to graphite, SiC x (x>1), or Si y CH 1-y (y<1) (in the region of 284,5 eV), as measured by an X-ray photoelectron spectroscopic analyzer (XPS).