| 发明名称 |
COPPER DOPED MAGNETIC SEMICONDUCTORS |
| 摘要 |
A semi-conducting material, a method for producing the material, and ways of implementing the material, wherein said material is doped with Cu or CuO, and is ferromagnetic at least at one temperature in the range between -55° C. and 125° C. Typically the material may comprise GaP or GaN. |
| 申请公布号 |
EP1782458(A1) |
申请公布日期 |
2007.05.09 |
| 申请号 |
EP20050745064 |
申请日期 |
2005.05.17 |
| 申请人 |
NM SPINTRONICS AB |
发明人 |
RAO, VENKAT;SHARMA, PARMANAND;GUPTA, AMITA |
| 分类号 |
H01L21/24;H01F1/40;H01F10/193;H01L;H01L21/324;H01L29/227;H01L29/66;H01L43/10 |
主分类号 |
H01L21/24 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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