发明名称 Dual path redundancy with stacked transistor voting
摘要 A method of operation and an apparatus for radiation hardening a combinational logic circuit are presented. A section of logic that is to be radiation hardened is identified. An entire logic circuit or a portion of the logic circuit may be radiation hardened. Once the section of logic is identified, a Field Effect Transistor (FET) is duplicated so as to create a voter FET. The voter FET is coupled with an original node (or signal) and a duplicated node (or signal). If a radiation event strikes either the original node or the duplicated node, the voter FET will prevent an upset from propagatmg to down stream logic by preventing a conduction path through the voter FET. Additionally, all of the circuitry that was duplicated in order to create the duplicated node may also undergo a radiation event without causing an upset to propagate to downsneam logic.
申请公布号 EP1783911(A2) 申请公布日期 2007.05.09
申请号 EP20060118289 申请日期 2006.08.02
申请人 HONEYWELL INTERNATIONAL INC. 发明人 FRIEDMAN, MARK E.
分类号 H03K19/003 主分类号 H03K19/003
代理机构 代理人
主权项
地址