发明名称 |
Semiconductor light-emitting device and method for manufacturing the same |
摘要 |
<p>The semiconductor light-emitting element uses a compound semiconductor quantum well structure comprising a well layer, and barrier layers between which the well layer is sandwiched, as an active layer. In the adjacent well layer and barrier layers of the semiconductor light-emitting element, the well layer has in part a doped well region to which an n-type impurity is added at the interface with the barrier layer on the electron injection side, and in the vicinity of this interface, and the barrier layer has a doped barrier region to which the n-type impurity is added at least at the interface and in the vicinity of this interface. <IMAGE></p> |
申请公布号 |
EP1564854(B1) |
申请公布日期 |
2007.05.09 |
申请号 |
EP20030772701 |
申请日期 |
2003.11.12 |
申请人 |
PIONEER CORPORATION |
发明人 |
WATANABE, ATSUSHI;ITO, ATUYA;TAKAHASHI, HIROKAZU;KIMURA, YOSHINORI;MIYACHI, MAMORU |
分类号 |
H01S5/343;B82Y20/00;H01S5/30 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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