发明名称 |
Semiconductor device configured for reducing post-fabrication damage |
摘要 |
A semiconductor device includes an IC die configured to reduce post-fabrication damage to the device. The IC die is formed such that at least a portion of one or more perimeter edges of the die are beveled by an etching process. The semiconductor device may include a plurality of IC dies, at least one of the IC dies being separated from the semiconductor device by forming one or more v-shaped grooves in an upper surface of the device, the v-shaped grooves defining perimeter edges of the at least one IC die. A back surface of the semiconductor device is removed until at least a portion of the v-shaped grooves are exposed. When the IC die is separated from the semiconductor device in this manner, a sidewall of each of the v-shaped grooves forms a beveled perimeter edge of the separated IC die. |
申请公布号 |
US7214568(B2) |
申请公布日期 |
2007.05.08 |
申请号 |
US20040773614 |
申请日期 |
2004.02.06 |
申请人 |
AGERE SYSTEMS INC. |
发明人 |
BRENNAN JOHN M.;FREUND JOSEPH MICHAEL;SHAH SUJAL DIPAK;SHANAMAN, III RICHARD HANDLY |
分类号 |
H01L21/00;H01L21/304;H01L21/306;H01L21/78;H01L23/00;H01L29/06 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|