发明名称 |
WIRE-TYPE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
<p>Provided are relatively higher-performance wire-type semiconductor devices and relatively economical methods of fabricating the same. A wire-type semiconductor device may include at least one pair of support pillars protruding above a semiconductor substrate, at least one fin protruding above the semiconductor substrate and having ends connected to the at least one pair of support pillars, at least one semiconductor wire having ends connected to the at least one pair of support pillars and being separated from the at least one fin, a common gate electrode surrounding the surface of the at least one semiconductor wire, and a gate insulating layer between the at least one semiconductor wire and the common gate electrode.</p> |
申请公布号 |
KR100718159(B1) |
申请公布日期 |
2007.05.08 |
申请号 |
KR20060044635 |
申请日期 |
2006.05.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, SUK PIL;PARK, YOON DONG;KIM, WON JOO |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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