发明名称 |
Semiconductor substrate and semiconductor circuit formed therein and fabrication methods |
摘要 |
A semiconductor substrate and a semiconductor circuit formed therein and associated fabrication methods are provided. A multiplicity of depressions with a respective dielectric layer and a capacitor electrode are formed for realizing buried capacitors in a carrier substrate and an actual semiconductor component layer being insulated from the carrier substrate by an insulation layer.
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申请公布号 |
US7214582(B2) |
申请公布日期 |
2007.05.08 |
申请号 |
US20050523944 |
申请日期 |
2005.02.08 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HOFMANN FRANZ;LEHMANN VOLKER;RISCH LOTHAR;ROESNER WOLFGANG;SPECHT MICHAEL |
分类号 |
H01L21/8242;H01L21/02;H01L21/334;H01L21/84;H01L27/108;H01L27/12;H01L29/94 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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