发明名称 |
CMOS inverters configured using multiple-gate transistors |
摘要 |
An inverter that includes a first multiple-gate transistor including a source connected to a power supply, a drain connected to an output terminal, and a gate electrode; a second multiple-gate transistor including a source connected to a ground, a drain connected to the output terminal, and a gate electrode; and an input terminal connected to the gate electrodes of the first and second multiple-gate transistors. Each of the first and second multiple-gate transistors may further include a semiconductor fin formed vertically on an insulating layer on top of a substrate, a gate dielectric layer overlying the semiconductor fin, and a gate electrode wrapping around the semiconductor fin separating the source and drain regions.
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申请公布号 |
US7214991(B2) |
申请公布日期 |
2007.05.08 |
申请号 |
US20020313887 |
申请日期 |
2002.12.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
YEO YEE-CHIA;YANG FU-LIANG;HU CHENMING |
分类号 |
H01L29/76;H01L21/336;H01L21/8238;H01L27/092;H01L27/12;H01L29/786 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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