发明名称 |
Passivation for improved bipolar yield |
摘要 |
A SiGe heterojunction bipolar transistor including at least an emitter formed on a SiGe base region wherein the sidewalls of the emitter are protected by a conformal passivation layer. The conformal passivation layer is formed on the exposed sidewalls of said emitter prior to siliciding the structure. The presence of the passivation layer in the structure prevents silicide shorts from occurring by eliminating bridging between adjacent silicide regions; therefore improved SiGe bipolar yield is obtained. A method for forming such a structure is also provided.
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申请公布号 |
US7214593(B2) |
申请公布日期 |
2007.05.08 |
申请号 |
US20010773798 |
申请日期 |
2001.02.01 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COOLBAUGH DOUGLAS DUANE;GRAY PETER B.;JOHNSON DONNA KAYE;ZIERAK MICHAEL JOSEPH |
分类号 |
H01L21/331;H01L21/8222;H01L29/737 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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