| 摘要 |
A semiconductor device capable of suppressing diffusion of noise signals is provided. The semiconductor device 100 has a BGA (Ball GridArray) structure inwhichaplurality of electrode terminals to do input and/or output of signals from and to the outside is arranged in a matrix form. The semiconductor device 100 includes a noise source electrode terminal 10 to do input and/or output of signals, and low-impedance electrode terminals 12 and 14. The noise source electrode terminal 10 does input and/or output of signals acting as a source of noises. The low-impedance electrode terminal 12 are arranged so as to be adjacent to the noise source electrode terminal 10 in a vertical or horizontal direction. The low-impedance electrode terminal 14 is arranged so as to be adjacent to the noise source electrode terminal 10 in a slanting direction. In order to make the low-impedance electrode terminals 12 and 14 be of a low impedance, these terminals 12 and 14 are connected to a grounding potential and connected through a capacitor having a large capacitance to the grounding potential. If necessary, the low-impedance electrode terminals 12' and 14' are arranged in a place surrounding the electrode terminal that is susceptible to noises . |
